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Title: Effects of Al content on properties of Al-N codoped ZnO films
Authors: Zeng, Yujia
Ye, Z ×
Lu, J
Zhu, L
Zhao, B
Huang, J #
Issue Date: Aug-2005
Publisher: New York
Series Title: Applied Surface Science vol:249 issue:1-4 pages:203-207
Abstract: N doped and Al-N codoped ZnO films were prepared by dc reactive magnetron sputtering with a series of metal-Zn targets having different Al contents. The best p-type electrical properties of codoped ZnO, such as carrier concentration of 2.52 x 10(17) cm(-3), resistivity of 28.3 ohm cm can be realized by using 0.4 at.% Al target. Results of Hall effect and X-ray photoelectron spectroscopy (XPS) measurements confirm that the presence of Al indeed facilitates the incorporation of N through formation Al-N bonds in codoped ZnO. Finally, a new judgement for codoping effect in ZnO is proposed tentatively: the best codoping effect can be realized when the codoped ZnO films possess a closest (002) d-spacing value to the nominally undoped ZnO. (c) 2004 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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