ITEM METADATA RECORD
Title: p-type conduction in N-Al co-doped ZnO thin films
Authors: Lu, J
Ye, Z ×
Zhuge, F
Zeng, Yujia
Zhao, B
Zhu, L #
Issue Date: Oct-2004
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:85 issue:15 pages:3134-3135
Abstract: p-type ZnO thin films have been realized by the N-Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Omega cm with a Hall mobility of 0.43 cm(2)/V s and carrier concentration of 2.25 X 10(17) cm(-3) for the N-Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type. ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. (C) 2004 American Institute Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science