Title: Carrier localization in codoped ZnO : N : Al films
Authors: He, H ×
Ye, Z
Zhuge, F
Zeng, Yujia
Zhu, L
Zhao, B
Huang, J
Chen, Z #
Issue Date: 2006
Publisher: Pergamon Press
Series Title: Solid State Communications vol:138 issue:10-11 pages:542-545
Abstract: Temperature-dependent photoluminescence (PL) from p-type ZnO film codoped with Al and N has been investigated. In the whole temperature range of 10-300 K, the PL was dominated by a broad emission centered at 3.05 eV. The dependencies of its peak energy on temperature and compensation indicate that this emission is due to recombination of localized carriers. We suggest that the localization is due to potential fluctuations caused by strong compensation and local compositional fluctuations of the impurities. We obtain an activation energy of similar to 69 meV from thermal quenching of the luminescence intensity and ascribe it to thermal ionization of shallow donors. (c) 2006 Elsevier Ltd. All rights reserved.
ISSN: 0038-1098
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science