Title: Ni/Au ohmic contacts to p-type N-doped ZnO
Authors: Lu, Y
Ye, Z ×
Zeng, Yujia
Zhu, L
Zhao, B #
Issue Date: 2008
Publisher: The Electrochemical Society
Series Title: Electrochemical and Solid-State Letters vol:11 issue:7 pages:H185-H188
Abstract: The authors fabricated low-resistivity Ni/Au ohmic contacts on N-doped p-type ZnO films using electron-beam evaporation and the transmission line model technique. Both as-deposited and thermally annealed contacts showed ohmic conduction, and the specific contact resistivity decreased with the increase of annealing temperature. The lowest specific contact resistivity of 2.06x10(-4) Omega cm(2) was achieved after annealing at 600 degrees C. Secondary ion mass spectroscopy indicated that activation of nitrogen acceptors and the interdiffusion at the metal/ZnO interface after annealing were accounted for by the improvement of ohmic conduction. The results also showed that the fabricated contacts were thermally stable. (C) 2008 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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