Title: Low-temperature MOVPE growth of ZnO thin films by using a buffer layer
Authors: Xu, W
Ye, Z ×
Jiang, L
Zeng, Yujia
Zhu, L
Zhao, B #
Issue Date: Jun-2006
Publisher: New York
Series Title: Applied Surface Science vol:252 issue:16 pages:5926-5929
Abstract: ZnO thin films have been grown on a-plane (1,1, - 2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 degrees C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission. (c) 2005 Elsevier B.V. All rights reserved.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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