Room-temperature photoluminescence from ZnO/ZnMgO multiple quantum wells grown on Si(111) substrates
Gu, X Zhu, L Ye, Z × Zhang, Y Huang, F Qiu, M Zeng, Yujia Liu, F Jaeger, W #
American Institute of Physics
Applied Physics Letters vol:91 issue:2 pages:1-3
A set of ten-period ZnO/Zn0.85Mg0.15O multiple quantum wells with well thickness varying from 2.5 to 5 nm has been grown on Si(111) substrates by pulsed laser deposition. A periodic structure with sharp interfaces was observed by cross-sectional transmission electron microscopy. The room-temperature photoluminescence resulting from the well regions exhibits a significant blueshift with respect to the ZnO single layer. The well layer thickness dependence of the emission energy from the well regions was investigated and compared with a simple theoretical model. The results suggest that the quantum confinement effects in the quantum wells can be observed up to room temperature. (C) 2007 American Institute of Physics.