Solid State Communications vol:138 issue:12 pages:577-579
High quality self-assemble ZnO quantum dots (QDs) have been successfully grown on the Si(I 11) substrates by metalorganic chemical vapor deposition (MOCVD). The diameter of ZnO QDs is about 10 nm in average, and the densities and the sizes of ZnO QDs can be well controlled by adjusting the growth temperature, which were evident in the SEM images. The properties and stress involved in ZnO QDs are studied by X-ray diffraction. In addition, room temperature photoluminescence spectra reveal that the ZnO QDs exhibit a band gap blue shift because of the quantum confinement effects. (c) 2006 Elsevier Ltd. All rights reserved.