Title: ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
Authors: Ye, Z ×
Lu, J
Zhang, Y
Zeng, Y
Chen, L
Zhuge, F
Yuan, G
Zhu, L
Huang, J
Zhao, B #
Issue Date: Sep-2007
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:91 issue:11 pages:1-3
Article number: 113503
Abstract: ZnO homojunction light-emitting diodes (LEDs), comprised of N-Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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