ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
Ye, Z × Lu, J Zhang, Y Zeng, Y Chen, L Zhuge, F Yuan, G Zhu, L Huang, J Zhao, B #
American Institute of Physics
Applied Physics Letters vol:91 issue:11 pages:1-3
ZnO homojunction light-emitting diodes (LEDs), comprised of N-Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.