Realization of p-type ZnO films via monodoping of Li acceptor
Zeng, Yujia Ye, Z × Xu, W Chen, L Li, D Zhu, L Zhao, B Hu, Y #
North-Holland Pub. Co.
Journal of Crystal Growth vol:283 issue:1-2 pages:180-184
p-Type ZnO thin films have been realized via monodoping of Li acceptor by adopting DC reactive magnetron sputtering. The lowest room-temperature resistivity was found to be 17.6 Omega cm with a Hall mobility of 3.47 cm(2) V-1 s(-1) and carrier concentration of 1.01 x 10(17)cm(-3) for Li-doped p-type ZnO film deposited on glass substrate. The Li-doped ZnO film possessed a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. Moreover, the effects of Li content on the crystallinity, electrical and optical properties of p-type ZnO films were discussed. (c) 2005 Elsevier B.V. All rights reserved.