Electrical characterization of ZnO-based homojunctions
Lu, J Ye, Z × Yuan, G Zeng, Yujia Zhuge, F Zhu, L Zhao, B Zhang, S #
American Institute of Physics
Applied Physics Letters vol:89 issue:5 pages:1-3
Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)/n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4 V and the reverse breakdown voltage of 5.3 V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)/i-(Zn,Cd)O/n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of similar to 18 V.