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Title: Electrical characterization of ZnO-based homojunctions
Authors: Lu, J
Ye, Z ×
Yuan, G
Zeng, Yujia
Zhuge, F
Zhu, L
Zhao, B
Zhang, S #
Issue Date: Jul-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:89 issue:5 pages:1-3
Article number: 053501
Abstract: Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)/n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4 V and the reverse breakdown voltage of 5.3 V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)/i-(Zn,Cd)O/n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of similar to 18 V.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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