Plasma-free nitrogen doping and homojunction light-emitting diodes based on ZnO
Zeng, Yujia Ye, Z × Lu, Y Xu, W Zhu, L Huang, J Zhao, B #
Institute of Physics and IOP Publishing
Journal of Physics D, Applied Physics vol:41 issue:16 pages:1-4
The authors develop a plasma-free metalorganic chemical vapour deposition method to grow N-doped p-type ZnO films. The incorporation of the N acceptor and the corresponding change in the Fermi level are well confirmed by x-ray photoelectron spectroscopy. Temperature-dependent photoluminescence reveals the acceptor-related emissions, namely, neutral acceptor-bound exciton and probably donor-acceptor pair transition. In addition, typical rectifying I-V characteristics and room-temperature electroluminescence from ZnO homojunction light-emitting diodes are demonstrated.