Title: Plasma-free nitrogen doping and homojunction light-emitting diodes based on ZnO
Authors: Zeng, Yujia
Ye, Z ×
Lu, Y
Xu, W
Zhu, L
Huang, J
Zhao, B #
Issue Date: Aug-2008
Publisher: Institute of Physics and IOP Publishing
Series Title: Journal of Physics D, Applied Physics vol:41 issue:16 pages:1-4
Article number: 165104
Abstract: The authors develop a plasma-free metalorganic chemical vapour deposition method to grow N-doped p-type ZnO films. The incorporation of the N acceptor and the corresponding change in the Fermi level are well confirmed by x-ray photoelectron spectroscopy. Temperature-dependent photoluminescence reveals the acceptor-related emissions, namely, neutral acceptor-bound exciton and probably donor-acceptor pair transition. In addition, typical rectifying I-V characteristics and room-temperature electroluminescence from ZnO homojunction light-emitting diodes are demonstrated.
ISSN: 0022-3727
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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