Title: Dual-acceptor p-type behaviour in ZnO films grown by plasma-assisted metalorganic chemical vapour deposition
Authors: Zeng, Yujia
Ye, Z ×
Lu, Y
Lu, J
Xu, W
Zhu, L
Zhao, B #
Issue Date: Mar-2007
Publisher: Institute of Physics and IOP Publishing
Series Title: Journal of Physics D, Applied Physics vol:40 issue:6 pages:1807-1810
Abstract: Nominally undoped and N-doped ZnO thin films were grown by plasma-assisted metalorganic chemical vapour deposition. P-type conductivity was confirmed by Hall-effect measurements, not only in the N-doped but also in the nominally undoped ZnO. The zinc vacancy and extrinsic nitrogen acceptor states were identified by low-temperature photoluminescence, with the energy level located at 270 meV and 180 meV above the valence-band maximum, respectively. An evident increment in the oxygen as well as nitrogen concentration in the p-type ZnO : N layer was well confirmed by secondary ion mass spectroscopy.
ISSN: 0022-3727
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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