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Title: Electrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition
Authors: Pan, X
L, Jiang
Zeng, Y
Zhu, L
Ye, Z ×
Zhao, B
Pan, X #
Issue Date: Jan-2008
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:103 issue:2 pages:1-4
Article number: 023708
Abstract: P-doped p-type ZnO thin films have been grown by metalorganic chemical vapor deposition. By modulating the P evaporating temperature, p-type conductivity can be controlled due to the different P content incorporated into the ZnO films. The P-doped p-type ZnO thin films are of high optical quality, as indicated by low-temperature photoluminescence. P-related acceptor state with an energy level of 163 meV is identified from free-to-neutral-acceptor transitions. In addition, x-ray photoelectron spectroscopy confirms that only one chemical bonding state of P exists in the P-doped ZnO thin films. (C) 2008 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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