Preparation of p-type ZnMgO thin films by Sb doping method
Pan, X Ye, Z × Zeng, Yujia Gu, X Zhu, L Zhao, B Che, Y Pan, X #
Institute of Physics and IOP Publishing
Journal of Physics D, Applied Physics vol:40 issue:14 pages:4241-4244
We report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 ohm cm, a Hall mobility of 1.71 cm(2) V-1 s(-1) and a hole concentration of 2.90 x 10(16) cm(-3) at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size- mismatched group-V dopants in ZnO, an Sb-Zn-2V(Zn) complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films.