Title: Preparation of p-type ZnMgO thin films by Sb doping method
Authors: Pan, X
Ye, Z ×
Zeng, Yujia
Gu, X
Zhu, L
Zhao, B
Che, Y
Pan, X #
Issue Date: Jul-2007
Publisher: Institute of Physics and IOP Publishing
Series Title: Journal of Physics D, Applied Physics vol:40 issue:14 pages:4241-4244
Abstract: We report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 ohm cm, a Hall mobility of 1.71 cm(2) V-1 s(-1) and a hole concentration of 2.90 x 10(16) cm(-3) at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size- mismatched group-V dopants in ZnO, an Sb-Zn-2V(Zn) complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films.
ISSN: 0022-3727
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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