Identification of acceptor states in Li-doped p-type ZnO thin films
Zeng, Yujia Ye, Z × Lu, J Xu, W Zhu, L Zhao, B Limpijumnong, S #
American Institute of Physics
Applied Physics Letters vol:89 issue:4 pages:1-3
We investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The Li-Zn acceptor state, with an energy level located at 150 meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions. Another deeper acceptor state located at 250 meV emerges with the increased Li concentration. A broad emission centered at 2.96 eV is attributed to a donor-acceptor pair recombination involving zinc vacancy. In addition, two chemical bonding states of Li, evident in x-ray photoelectron spectroscopy, are probably associated with the two acceptor states observed.