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Title: Identification of acceptor states in Li-doped p-type ZnO thin films
Authors: Zeng, Yujia
Ye, Z ×
Lu, J
Xu, W
Zhu, L
Zhao, B
Limpijumnong, S #
Issue Date: Jul-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:89 issue:4 pages:1-3
Article number: 042106
Abstract: We investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The Li-Zn acceptor state, with an energy level located at 150 meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions. Another deeper acceptor state located at 250 meV emerges with the increased Li concentration. A broad emission centered at 2.96 eV is attributed to a donor-acceptor pair recombination involving zinc vacancy. In addition, two chemical bonding states of Li, evident in x-ray photoelectron spectroscopy, are probably associated with the two acceptor states observed.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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