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Title: p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
Authors: Zeng, Yujia
Ye, Z ×
Xu, W
Lu, J
Zhu, L
Zhao, B
Che, Y
Zhang, S #
Issue Date: Jun-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:88 issue:26 pages:1-3
Article number: 262103
Abstract: We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7 Omega cm, a Hall mobility of 2.6 cm(2)/V s, and a hole concentration of 1.88 x 10(17) cm(-3). The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270 meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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