ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition
Xu, W Ye, Z × Zeng, Yujia Zhu, L Zhao, B Jiang, L Lu, J Zhang, S #
American Institute of Physics
Applied Physics Letters vol:88 issue:17 pages:1-3
We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10(16) - 10(17) cm(-3) and mobility of 1-10 cm(2) V-1 s(-1). Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range. (c) 2006 American Institute of Physics.