Title: Dopant source choice for formation of p-type ZnO: Li acceptor
Authors: Zeng, Yujia
Ye, Z ×
Xu, W
Lu, J
Zhu, L
Zhao, B #
Issue Date: Feb-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:88 issue:6 pages:1-3
Article number: 062107
Abstract: Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Omega cm, Hall mobility of 2.65 cm(2)/V s, and hole concentration of 1.44x10(17) cm(-3) was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. (c) 2006 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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