Title: Light, Bias, and Temperature Effects on Organic TFTs
Authors: Wrachien, N
Cester, A
Bellaio, N
Pinato, A
Meneghini, M
Tazzoli, A
Meneghesso, G
Myny, K
Smout, S
Genoe, Jan #
Issue Date: 2010
Publisher: Ieee
Host Document: 2010 international reliability physics symposium pages:334-341
Conference: 48TH Annual IEEE International Reliability Physics Symposium (IRPS) Anaheim, CA, MAY 02-06, 2010
Abstract: In this work we present the instabilities observed in organic Thin-Film Transistors when subjected to stress test in different bias, temperature and illumination conditions. C-V measurements, indicate the presence of two distinct trapping phenomena. Appreciable charge trapping can be achieved using relatively high biases for long times (1000s). Illumination strongly enhances charge trapping only under positive gate biases, while it has no effect on the charge trapping/detrapping under negative gate bias. Charge detrapping is thermally activated coherently with trapping/detrapping at the SiO2/pentacene interface from hydrogenoid species. A first order model explaining the observed relaxation kinetics is also presented.
ISBN: 978-1-4244-5431-0
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science