Materials and processes for nonvolatile memories ii vol:997 pages:15-20
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Symposium on Materials and Processes for Nonvolatile Memories II held at the 2007 MRS Spring Meeting location:San Francisco, CA date:APR 10-13, 2007
CuTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) is a resistive switching charge-transfer complex which can be used for organic nonvolatile memories. In this contribution we report on a thorough investigation of the electrical switching of CuTCNQ memories. Our memories currently achieve an endurance of up to 10000 write/erase cycles with a clear distinction between ON and OFF reading currents. ON and OFF threshold voltages follow a Gaussian distribution. Temperature dependent measurements of CuTCNQ based organic memories show a semiconductor like behavior for the ON state. The retention time of the ON state exceeded 60 hours at room temperature. Electrical switching of GuTCNQ memories in air was virtually not affected by temperatures up to 80 C, but becomes erratic at 120 C. The CuTCNQ material itself already starts to decompose around 200 C in presence of oxygen as shown by thermogravimetric analysis.