Magnetoresistance phenomena in ferromagnetic/wide band gap polymer system
Lachinov, A. N × Genoe, Jan Vorob'eva, N. V Lachinov, A. A Garifullina, F. F Kornilov, V. M #
Synthetic Metals vol:161 issue:7-8 pages:642-645
3rd International Meeting on Spins in Organic Semiconductors (SPINOS III) Amsterdam, NETHERLANDS, AUG 30-SEP 03, 2011
The appearance of huge injection magnetoresistance effect (HMR) in the ferromagnetic/polymer/non-magnetic metal structure has been considered. Poly(3,3'-phthalydiliden-4,4'biphenylen) (PPB), a non-conjugated polymer, is used as the polymer material. The influence of bias voltage polarity on the value of threshold magnetic field needed for conductivity switching has been established. The angular magnetoresistive dependence can be also observed in the same structure. The model of magnetoresistive effects has been proposed. The explanation is based on specific zone structure of the ferromagnet/wide band gap polymer interface. (C) 2010 Elsevier B.V. All rights reserved.