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Title: The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
Authors: Hellings, Geert
Hikavyy, Andriy
Mitard, Jerome
Witters, Liesbeth
Benbakhti, Brahim
Alian, AliReza
Waldron, Niamh
Bender, Hugo
Eneman, Geert
Krom, Raymond
Schulze, Andreas
Vandervorst, Wilfried
Loo, Roger
Heyns, Marc
Meuris, Marc
Hoffmann, Thomas
De Meyer, Kristin #
Issue Date: Feb-2012
Publisher: Elsevier Sequoia
Series Title: Thin Solid Films vol:520 issue:8 pages:3326-3331
Conference: 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7 location:Leuven Belgium date:08/29/2011
Abstract: The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V-T-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage. (C) 2011 Elsevier B. V. All rights reserved.
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Surface and Interface Engineered Materials
Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
# (joint) last author

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