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Title: Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
Authors: Gencarelli, Federica ×
Vincent, B
Souriau, L
Richard, O
Vandervorst, Wilfried
Loo, R
Caymax, M
Heyns, Marc #
Issue Date: Feb-2012
Publisher: Elsevier Sequoia
Series Title: Thin Solid Films vol:520 issue:8 pages:3211-3215
Abstract: In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at temperatures as low as 275 degrees C and a specific Ge2H6 surface reaction is proposed to explain the growth mechanism at those very low temperatures. In addition, we highlight that Ge2H6 provides solutions, not covered by conventional GeH4, for various original Ge-based materials: direct deposition of amorphous Ge layers directly on dielectric or metallic surfaces, as well as the epitaxial growth of smooth, fully strained, monocrystalline GeSn layers on Ge substrates. (C) 2011 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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