Title: In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)
Authors: Demeulemeester, Jelle ×
Knaepen, W
Smeets, Dries
Schrauwen, Annelore
Comrie, C. M
Barradas, N. P
Vieira, A
Detavernier, C
Temst, Kristiaan
Vantomme, André #
Issue Date: Feb-2012
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:111 issue:4 pages:-
Article number: 043511
Abstract: We report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy, and Er). Both interlayer (Ni/RE/< Si >) and alloy (Ni-RE/< Si >) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni2Si2RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni-rich silicide and NiSi. Moreover, the formation of Ni2Si2RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. Besides a significant effect on the silicide growth, we have found that adding 5 at. % Er (relative to Ni) lowers the NiSi Schottky barrier height on n-type Si(100) by approximately 0.1 eV for the interlayer and alloy configuration. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681331]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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