Title: Lattice position and thermal stability of diluted As in Ge
Authors: S. Decoster, Stefan ×
Wahl, Ulrich
Cottenier, Stefaan
Correia, J. G
Mendonca, T
Pinto de Almeida Amorim, lmarina
L M C Pereira, Lino
Vantomme, André #
Issue Date: Mar-2012
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:111 issue:5 pages:-
Article number: 053528
Abstract: We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms and that, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600 degrees C. After 700 degrees C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile. (C) 2012 American Institute of Physics. []
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science