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Title: The dependence of barrier heights of a-C: Fe/n-Si heterojunctions on film-depositing temperatures
Authors: Wan, Caihua ×
Zhang, Xiaozhong
Vanacken, Johan
Geo, Xili
Moshchalkov, Victor #
Issue Date: May-2011
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:109 issue:10 pages:1-7
Article number: 103706
Abstract: Iron doped amorphous carbon (a-C: Fe) films on n-Si substrates were fabricated by pulse laser deposition technique. Barrier heights of the heterojunctions, measured in the electrical methods, were found to decrease gently below 300 degrees C and then increase anomalously thereafter. An interface energy band model was proposed to interpret the band structure of the heterojunctions as well as to calculate bandgaps of the a-C: Fe films. The abnormal increase in the barrier heights above 300 degrees C was attributed to the narrowing of pi and pi* bands due to the increased ordering degree of the sp(2) clusters in a-C films, which was verified in Raman spectra and electron energy loss spectroscopy. (C) 2011 American Institute of Physics. [doi :10.1063/1.3587157]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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