Title: Room-temperature nonsaturating magnetoresistance of intrinsic bulk silicon in high pulsed magnetic fields
Authors: Wu, L. H ×
Zhang, X
Vanacken, Johan
Schildermans, Noƫlla
Wan, C. H
Moshchalkov, Victor #
Issue Date: Mar-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:11 pages:1-3
Article number: 112113
Abstract: Nonsaturating positive magnetoresistance (MR) of intrinsic bulk silicon (i-Si) was observed at forward bias, exhibiting an almost linear behavior at high magnetic fields (5 T < B < 40 T). The MR reaches 180% at 40 T at room temperature using a bias of 1.5 V, and there is no indication that this MR would saturate at even stronger fields. The nonsaturating large MR of i-Si supports experimentally the hypothesis that the MR of silicon may be induced by inhomogeneous current flows. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569139]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
1.pdf Published 713KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science