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Title: Cost-effective cleaning and high-quality thin gate oxides
Authors: Heyns, MM ×
Bearda, T
Cornelissen, I
De Gendt, Stefan
Degraeve, R
Groeseneken, Guido
Kenens, C
Knotter, DM
Loewenstein, LM
Mertens, PW
Mertens, S
Meuris, M
Nigam, T
Schaekers, M
Teerlinck, I
Vandervorst, Wilfried
Vos, R
Wolke, K #
Issue Date: Jan-1999
Publisher: Ibm corp
Series Title: Ibm journal of research and development vol:43 issue:3 pages:339-350
Abstract: Some recent findings in the area of wafer cleaning and thin oxide properties are presented in this paper. Results are shown for a practical implementation of a simplified cleaning concept that combines excellent performance in terms of metal and particle removal with low chemical and DI-water consumption. The effect of organic contamination on ultrathin gate-oxide integrity is illustrated, and the feasibility of using ozonated DI water as an organic removal step is discussed. Metal outplating from HF and HF/HCl solutions is investigated. Also, the final rinsing step is critically evaluated. It is demonstrated that Si surface roughness without the presence of metal contaminants does not degrade gate-oxide integrity. Finally, some critical remarks on the reliability measurements for ultrathin gate oxides are given; it is shown that erroneous conclusions Can be drawn from constant-current charge-to-breakdown measurements.
URI: 
ISSN: 0018-8646
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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