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Title: Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO2/TaN/TiN transistor
Authors: Ranjan, R ×
Pey, KL
Tung, CH
Ang, DS
Tang, LJ
Kauerauf, Thomas
Degraeve, R
Groeseneken, Guido
De Gendt, Stefan
Bera, LK #
Issue Date: Jan-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:88 issue:12 pages:-
Abstract: Ultrafast progressive breakdown has been observed in a TaN/TiN metal gate metal-oxide-semiconductor field effect transistor (MOSFET) compared to a polycrystalline silicon gate MOSFET. Physical analysis by transmission electron microscopy and electrical characterization shows that the ultrafast progressive breakdown is likely to be associated with a metal-like filament formation of the breakdown path. It has been observed that the metal-like filament of the breakdown path is detrimental to the metal gate MOSFET progressive breakdown lifetime. (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Electrical Engineering - miscellaneous
Molecular Design and Synthesis
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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