Title: Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
Authors: Lujan, G.S. ×
Magnus, W.
Ragnarsson, L.A.
Kubicek, S.
De Gendt, Stefan
Heyns, Marc
De Meyer, Christina #
Issue Date: Jan-2005
Publisher: Pergamon-elsevier science ltd
Series Title: Microelectronics reliability vol:45 issue:5-6 pages:794-797
Abstract: The electron mobility in high-k transistors is degraded when compared to silicon oxide transistors. So far this problem has hampered the production of high-k transistors. One of the main causes of the low mobility is remote Coulomb scattering from charges in the dielectric. In this paper we analyse how the dielectric constants can change the mobility in a high-k stacked transistors. When an interface layer (IL) is used between the semiconductor and the high-k dielectric, the increase of the dielectric constant of the IL degrades the mobility. When the dielectric constant of the high-k layer is increased, the mobility is increased. These two opposite effects can be explained by an increase of the electric coupling in the first case and by an increase of the fringing field in the second. We study the electron mobility as a function of dielectric constant and thickness for three different stacks. Higher permittivity layers in combination with an interface layer free of charges are desirable to improve mobility. (c) 2004 Published by Elsevier Ltd.
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science