SILICON CARBIDE AND RELATED MATERIALS vol:679-680 pages:804-807
Material Science Forum
European Conference on Silicon Carbide and Related Materials edition:8 location:Sundvolden Conf Ctr, Oslo, NORWAY date:29 AUG - 02 SEP 2010
Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 degrees C. Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 - 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.