Title: Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
Authors: Auret, F.D.
Meyer, W.E.
Diale, M.
van Rensburg, P.J.J.
Song, SF
Temst, Kristiaan
Vantomme, André #
Issue Date: 2011
Host Document: SILICON CARBIDE AND RELATED MATERIALS vol:679-680 pages:804-807
Series Title: Material Science Forum
Conference: European Conference on Silicon Carbide and Related Materials edition:8 location:Sundvolden Conf Ctr, Oslo, NORWAY date:29 AUG - 02 SEP 2010
Abstract: Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 degrees C. Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 - 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Nuclear and Radiation Physics Section
# (joint) last author

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