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Title: Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
Authors: Van Elshocht, S ×
Caymax, M
Conard, T
De Gendt, Stefan
Hoflijk, I
Houssa, Michel
Leys, F
Bonzom, Renaud
De Jaeger, B
Van Steenbergen, J
Vandervorst, Wilfried
Heyns, Marc
Meuris, M #
Issue Date: Jun-2006
Publisher: Elsevier science sa
Series Title: Thin Solid Films vol:508 issue:1-2 pages:1-5
Conference: International Conference on Silicon Epitaxy and Heterostructures edition:4th location:Hyogo, Japan date:23-26 may 2005
Article number: Invited Paper
Abstract: Germanium is studied as a replacement candidate for silicon as channel material to enhance transistor performance. Interface states that cannot be passivated by standard forming gas anneals have been widely reported. In this work we demonstrate that thermal processing of a germanium/HfO2 stack leads to the formation of a hafnium germanate (HfGeOx) that appears to be linked to these interface states. Our results suggest that interactions between HfO2 and germanium can only be avoided by passivating the germanium with a capping layer. As an example, we discuss the use of a thin epitaxially grown Si layer that leads to greatly improved CV-characteristics. (c) 2006 Published by Elsevier B.V.
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
Semiconductor Physics Section
× corresponding author
# (joint) last author

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