Title: Pb(0) centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect
Authors: Hiller, Daniel ×
Jivanescu, Mihaela
Stesmans, Andre
Zacharias, Margit #
Issue Date: Apr-2010
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:107 issue:8 pages:-
Article number: 084309
Abstract: The correlation of paramagnetic defects and photoluminescence (PL) of size controlled Si nanocrystals (NCs) has been studied as a function of annealing ambient (Ar or N-2) and subsequent H-2 treatment. The dominant defects measured by electron spin resonance are interfacial Pb(0) and Pb1 centers. Whereas the latter appears to play only a minor role in PL quenching, a pronounced correlation between Pb(0) density and PL intensity is demonstrated. Annealing in N-2 is found to be superior over Ar both in terms of PL performance and defect densities. The origin of the PL blueshift found for N-2 annealing compared to Ar was previously interpreted as a growth suppression of the Si clusters due to incorporation of N atoms or a silicon consuming nitridation at the NC/SiO2 interface. The results presented here, demonstrate the blueshift to be more pronounced for small NCs (similar to 2 nm) than for larger ones (similar to 4.5 nm). Therefore, we suggest an alternative interpretation that is based on the influence of the polarity of surface terminating groups on the electronic properties of the NCs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3388176]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science