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Title: Electrical characteristics of 8-angstrom EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
Authors: Ragnarsson, L.A. ×
Severi, Simone
Trojman, Lionel
Johnson, K.D.
Brunco, D.P.
Aoulaiche, Marc
Houssa, Michel
Kauerauf, Thomas
Degraeve, R.
Delabie, Annelies
Kaushik, V.S.
De Gendt, Stefan
Tsai, W.
Groeseneken, Guido
De Meyer, Christina
Heyns, Marc #
Issue Date: Jul-2006
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Electron Devices vol:53 issue:7 pages:1657-1668
Abstract: The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 angstrom, a leakage current of 1.5 A/cm(2) at V-G = 1 V, a peak mobility of 190 cm(2)/V center dot s, and a drive-current of 815 mu A/mu m at an OFF-state current of 0.1 mu A/mu m for V-DD = 1.2 V. Identical gate stacks processed with a 1000-degrees C spike anneal have a higher peak mobility at 275 cm(2)/V center dot s, but a 5-A higher EOT and a reduced drive current at 610 mu A/mu m. The observed performance improvement for the low thermal-budget devices is shown to be mostly related to the lower EOT. The time-to-breakdown measurements indicate a maximum operating voltage of 1.6 V (1.2 V at 125 degrees C) for a ten-year lifetime, whereas positive-bias temperature-instability measurements indicate a sufficient lifetime for operating voltages below 0.75 V.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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