Title: Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
Authors: L M C Pereira, Lino ×
Wahl, Ulrich
S. Decoster, Stefan
Correia, J. G
da Silva, M. R
Vantomme, André
Araujo, J. P #
Issue Date: May-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:20 pages:-
Article number: 201905
Abstract: We report on the lattice location of Mn in heavily p-type doped GaAs by means of beta(-) emission channeling from the decay of Mn-56. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400 degrees C, with an activation energy for diffusion of 1.7-2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga1-xMnxAs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592568]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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