Title: Ge1-xSnx stressors for strained-Ge CMOS
Authors: Takeuchi, S ×
Shimura, Y
Nishimura, T
Vincent, B
Eneman, Geert
Clarysse, T
Demeulemeester, Jelle
Vantomme, André
Dekoster, J
Caymax, M
Loo, R
Sakai, A
Nakatsuka, O
Zaima, S #
Issue Date: Jun-2011
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:60 issue:1 pages:53-57
Conference: International SiGe Technology and Device Meeting (ISTDM) Kista, SWEDEN, MAY 24-26, 2010
Abstract: In this paper, we propose the fabrication of whole strained Ge complementary metal oxide-semiconductor (CMOS) with Ge1-xSnx materials as stressors to outperform the state-of-the-art uniaxial compressive strained Si CMOS. Ge1-xSnx materials have larger lattice constant than that of Ge, which can apply the strain into Ge channel region.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science