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Title: Behaviour of metallic contaminants during MOS processing
Authors: Bearda, T. ×
De Gendt, Stefan
Loewenstein, L.
Knotter, M.
Mertens, Paul
Heyns, Marc #
Issue Date: Jan-1999
Publisher: Trans tech-scitec publications ltd
Series Title: Solid state phenomena vol:65-6 pages:11-14
Abstract: The effect of a range of metallic contaminants on the Gate Oxide Integrity of MOS capacitors is reported. A comparison is made with analytical measurements such as Total Reflection X-ray Fluorescence (TXRF), Secondary Ion Mass Spectroscopy (SIMS), light scattering and lifetime measurements. The results are interpreted in terms of impurity redistribution during gate oxidation and poly-silicon deposition.
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Clinical Residents Medicine
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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