Title: Ultra-thin oxide growth on silicon using ozonated solutions
Authors: De Smedt, Frank ×
Vinckier, Christiaan
Cornelissen, I.
De Gendt, Stefan
Meuris, M.
Gilis, Geert
Heyns, Marc #
Issue Date: Jan-1999
Publisher: Trans tech-scitec publications ltd
Series Title: Solid state phenomena vol:65-6 pages:81-84
Abstract: Ultra-thin oxide layers were grown using ozonated solutions in function of following parameters: immersion time, ozone concentration and pH. The grown layers were etched away and the oxide layer thickness was measured by determining the Si-concentration in the etch solutions by the Molybdenum Blue method. The oxide layer thickness evolves within 10 minutes to a quasi-maximum and depends on the ozone concentration in the range of 1-15 ppm. At a pH of 1.2 (HNO3) the maximum is somewhat higher than at pH = 4.6. An initial oxidation rate (dt(ox)/dt) was determined at an immersion time of 6 seconds and it was found that the initial oxidation rate is linear with [O-3] for both pH-values. This indicates that initially the reaction is surface-controlled.
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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