Title: Size dependence of P-b-type photoluminescence quenching defects at the Si nanocrystal interface
Authors: Jivanescu, Mihaela ×
Hiller, D
Zacharias, M
Stesmans, Andre #
Issue Date: Oct-2011
Publisher: Editions de Physique
Series Title: Europhysics Letters vol:96 issue:2 pages:1-4
Article number: 27003
Abstract: Size-controlled Si nanocrystals (nc's) of similar to 2 to 5 nm diameter embedded in amorphous (a-)SiO2 are extensively studied by electron spin resonance (ESR) and photoluminescence (PL). The PL quenching P-b-type (Si dangling bond) interface defects -P-b(0) and P-b1 centers-are investigated as a function of Si nc's size and effective interface area with the embedding SiO2. It is shown that the effective areal P-b-type defect density at the nc-Si/SiO2 interface remains approximately constant, indifferent of the nc size. While Si nc's larger than approximate to 3.5 nm are found to house, on average, at least one PL quenching P-b-type defect, about 75% of the as-annealed 2 nm Si nc's appear P-b-free. Additional study on the effect of heat treatment in H-2 indicates this step to be more efficient in inactivating P-b(0) than P-b1 for all Si nc sizes. Copyright (C) EPLA, 2011
ISSN: 0295-5075
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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