Title: Paramagnetic P-b-type interface defects in thermal (110)Si/SiO2
Authors: Keunen, Koen ×
Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: May-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:21 pages:-
Article number: 213503
Abstract: A multifrequency electron spin resonance (ESR) study on thermal (110)Si/SiO2 as a function of oxidation temperature T-ox(200-1125 degrees C) reveals an unexpectedly high density of P-b-type interface centers, which variant, based on pertinent ESR properties, is typified as P-b0((110)). In terms of P-b(0) center density, the (110) face is found to be the worst of all three low index Si interfaces, i.e., [P-b0((100))]<[P-b((111))]<[P-b0((110))], over the range T-ox < similar to 900 degrees C. Unlike previous belief, the density of prevailing P-b(0) centers over the low index Si/SiO2 interfaces is not found to scale with Si surface areal atom density nor available Si bond density; an alternative criterion is suggested. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3590271]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science