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Title: Open-circuit potential analysis as a fast screening method for the quality of high-k dielectric layers
Authors: Claes, M ×
Witters, T
Loriaux, G
Van Elshocht, Sven
Delabie, Annelies
De Gendt, Stefan
Heyns, MM
Okorn-Schmidt, H #
Issue Date: Jan-2003
Publisher: Trans tech publications ltd
Series Title: Ultra clean processing of silicon surfaces v vol:92 pages:7-10
Abstract: Open Circuit Potential analysis (in combination with additional analysis techniques) is used as a fast-screening method to investigate the quality of high-k dielectric layers. Surface pretreatment prior to high-k deposition, high-k deposition techniques and temperature as well as post-deposition annealing have an effect on the etch behavior of the high-k materials. It is found that HF-last interfaces produce poor quality (non-closed layers) high-k layer depositions. Those after native oxide or rapid thermal oxidation (SiOx) are of a better quality (more dense). However, depositing HfO2 on SiOx interfaces could result in interface reactivity with formation of silicates. Also, increased temperature high-k deposition and post deposition annealing lead to high-k layer densification (i.e. better layer quality).
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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