|ITEM METADATA RECORD
|Title: ||SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation|
|Authors: ||Rodrigues, M|
|Issue Date: ||2011 |
|Publisher: ||Electrochemical Society, Inc|
|Host Document: ||Electrochemical Society Transactions - ECS Transactions vol:39 issue:1 edition:215 pages:222|
|Conference: ||26th Symposium on Microelectronics Technology and Devices - SBMicro location:Joao Pessoa Brazil date:08/30/2011|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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