Title: First-principles study of Ge dangling bonds in GeO2 and correlation with spin resinance at Ge/GeO2 interfaces
Authors: Houssa, Michel ×
Pourtois, Geoffrey
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: 2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:99 issue:21 pages:212103-1-212103-3
Article number: 212103
Abstract: The g-tensors of dangling bonds at defective Ge atoms in GeO2 are computed using density functional theory. The isotropic g-values of these defects are found to increase with the number of Ge backbonds. By comparing these calculations with the isotropic g-value of a Ge-related defect at Ge/GeO2 interfaces, recently observed by electron spin resonance (ESR) experiments, we tentatively identify this defect as a Ge2O Ge-center dot center, i.e., a dangling bond on a Ge atom backbonded to two Ge atoms and one O atom, likely present near the Ge/GeO2 interface. The interaction of this defect with molecular hydrogen is investigated using first-principles molecular dynamics simulations. Our simulations predict that the Ge dangling bond can be hardly passivated by H-2 molecules, in agreement with the electron spin resonance study. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662860]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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