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Title: Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2 µm buffer thickness by local substrate removal
Authors: Srivastava, Puneet ×
Das, Jo
Visalli, Domenica
Van Hove, Marleen
Malinowski, Pawel
Marcon, Denis
Lenci, Silvia
Geens, Karen
Cheng, Kai
Leys, Maarten
Decoutere, Stefaan
Mertens, Robert Pierre
Borghs, Gustaaf #
Issue Date: Jan-2011
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:32 issue:1 pages:30-32
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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