Title: Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
Authors: Adelmann, Christoph ×
Lin, Dennis
Nyns, Laura
Schepers, Bart
Delabie, Annelies
Van Elshocht, Sven
Caymax, Matty #
Issue Date: Jul-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:7 pages:1098-1100
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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