China Semiconductor Technology International Conference - CSTIC, Date: 2011/01/03 - 2011/01/13, Location: Shanghai China
ECS Transactions
Author:
Keywords:
Science & Technology, Physical Sciences, Technology, Electrochemistry, Engineering, Electrical & Electronic, Engineering, EMBEDDED SOURCE/DRAIN, STRAIN-RELAXATION, LEAKAGE CURRENT, STRESS-ANALYSIS, SIGE, SILICON, CARBON, OXIDE, INTERFACE, OXYGEN, 4008 Electrical engineering, 4017 Mechanical engineering, 4018 Nanotechnology
Abstract:
The impact of different processing steps on the electrical properties of homo- and hetero-epitaxial junctions deposited on silicon substrates is described. In particular, the influence of the pre-epi in situ cleaning, using a high temperature bake in H2 is investigated. It is shown that the removal of oxygen and carbon from the starting surface is crucial in obtaining high-quality, low-leakage epitaxial junctions. In addition, it is demonstrated that post-epi implantation and anneal should be carefully optimized in order to maintain the strain in SiGe layers and to control the defect formation. ©The Electrochemical Society.