Title: Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Authors: Vincent, Benjamin ×
Gencarelli, Federica
Bender, Hugo
Merckling, Clement
Douhard, Bastien
Petersen, D.H
Hansen, O
Henrichsen, H.H
Meersschaut, Johan
Vandervorst, Wilfried
Heyns, Marc
Loo, Roger
Caymax, Matty #
Issue Date: Nov-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:99 issue:15 pages:152103
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Structural Composites and Alloys, Integrity and Nondestructive Testing
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science