Title: Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultra-low-k PECVD dielectrics
Authors: Urbanowicz, Adam ×
Vanstreels, Kris
Verdonck, Patrick
Van Besien, Els
Trompoukis, Christos
Shamiryan, Denis
De Gendt, Stefan
Baklanov, Mikhaïl #
Issue Date: May-2011
Publisher: American Vacuum Society (AVS)
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:3 pages:-
Conference: 57th Symposium of the American-Vacuum-Society Albuquerque, NM, NOV 17-22, 2010
Article number: 032201
Abstract: The effect of narrow-band 172 nm and broad-band >200 nm UV sources in the new curing scheme of the plasma-enhanced chemical vapor deposition (PECVD) dielectrics is studied. The new curing scheme is based on porogen removal (organic sacrificial phase introduced to generate open porosity) from PECVD dielectric before its final UV curing. The results are compared with the PECVD films fabricated in the conventional scheme in which porogen is still present during the UV curing. The same curing time of porogen-containing conventional PECVD films with 172 nm and >200 nm UV sources results in only 10% difference in their Young's modulus (YM) : 5.84 and 5.32 GPa, respectively. However, the porogen-free films cured with 172 nm UV source show a YM of 6.64 GPa (k(100) (kHz) similar to 2.2, 44% open porosity), approximately twice as large as those cured with >200 nm UV having a YM of 3.38 GPa (k(100) (kHz) similar to 2.0, 48% open porosity). The mechanical properties, optical properties in the range of 150-800 nm, dielectric constants at 100 kHz and 4 GHz, porosities, pore size distributions, and bonding structure are evaluated. The impact of porogen on optical characteristics and, therefore, on the photochemical UV-hardening mechanism is discussed. The achieved mechanical properties are explained on a basis of the percolation of rigidity theory and random network concepts. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3572063]
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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