Title: Fully CMOS BEOL compatible HfO2 RRAM cell, with low (µA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Authors: Chen, Yangyin
Goux, Ludovic
Pantisano, Luigi
Swerts, Johan
Adelmann, Christoph
Mertens, Sofie
Afanas'ev, Valeri
Wang, Xin Peng
Govoreanu, Bogdan
Degraeve, Robin
Kubicek, Stefan
Paraschiv, Vasile
Verbrugge, Beatrijs
Jossart, Nico
Altimime, Laith
Jurczak, Malgorzata
Kittl, Jorge
Groeseneken, Guido
Wouters, Dirk
Issue Date: 2011
Conference: IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM location:Dresden Germany date:05/08/2011
ISBN: 978-1-4577-0502-1
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Semiconductor Physics Section

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