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Title: GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
Authors: Merckling, Clement ×
Sun, X
Alian, Ali Reza
Brammertz, Guy
Afanas'ev, Valeri
Hoffmann, TY
Heyns, Marc
Caymax, Matty
Decoster, Johan #
Issue Date: Apr-2011
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:109 issue:7 pages:1-9
Article number: 073719
Abstract: The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al2O3/GaSb interface have been studied by in situ deposition of an Al2O3 high-kappa gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D-it along the bandgap, these results point out an efficient electrical passivation of the Al2O3/GaSb interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569618]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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